| While ideal semiconductors are characterized by an energy gap that separates filled and empty electronic states, real semiconductors have defects that produce new energy levels within the gap. These defect-related levels trap charge carriers and reduce the efficiency of solar cells. With transient capacitance spectroscopy (also known as deep level transient spectroscopy or DLTS), we selectively fills these levels and then monitor their occupation to evaluate capture characteristics, depth, and density. The paper below describes a unique trap that we discovered with DLTS. |
|
(Click on the link below to download and view PDF file)
|
Department of Physics, Davidson College, Davidson, NC 28035
National Renewable Energy Laboratory, Golden, CO 80401
in
Indium Phosphide and Related Materials
(edited by Iain Thayne, John Marsh, and Catrina Bryce, IEEE, 2005)