Results
Germanium |
Silicon |
|
Eg measured |
.771+/-.017eV |
1.12+/-9x10-5eV |
Eg accepted |
.67 |
1.12eV |
%Error |
15% |
0% |
h |
2.69+/-.3 |
1.77+/-.017 |
To ensure a linear graph of Ln(Io) vs V, data points at low voltages were disregarded. For germanium this correlated with currents in the range from 4mA to 10mA (points below 4mA were neglected) and for silicon measurements were considered from 2mA to 10mA.