To make the most efficient solar cells, the conversion of light to electricity must be maximized.  Recombination reduces the efficiency by allowing excited electrons to return to the ground state before escaping the cell.  We study the recombination process to explore this loss mechanism and how it can be minimized.  The first paper below describes a recombination investigation that reveals new details in the energy level distribution of a semiconductor.  The second paper discusses the temperature dependence of various recombination pathways.

 

Defect-related density of states in low-bandgap InGaAs/InAsP double heterostructures grown on InP substrates

T.H. Gfroerer, L.P. Priestley, and F.E. Weindruch

Department of Physics, Davidson College, Davidson, NC 28035

M.W. Wanlass

National Renewable Energy Laboratory, Golden, CO 80401

in Applied Physics Letters  80, 4570 (2002).

 

Temperature dependence of nonradiative recombination in low-band gap InGaAs/InAsP double heterostructures grown on InP substrates

T.H. Gfroerer and L.P. Priestley

Department of Physics, Davidson College, Davidson, NC 28035

M.F. Fairley

Spelman College, Atlanta, GA 30314

M.W. Wanlass

National Renewable Energy Laboratory, Golden, CO 80401

in Journal of Applied Physics  94, 1738 (2003).